70-W212NMA600SC03-M200P03 Datasheet, PDF (16/29 Pages) Vincotech – Mixed voltage NPC

70-W212NMA600SC03-M200P03
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
80
Boost
neutral point IGBT and half bridge FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
100
Q_{rr High T}
80
60
60
40
40
Q_{rr Low T}
20
20
0
0
At ⁰
200
400
600
800
1000 I _C (A) 1200
0
2
4
6
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
600
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
700
600
500
400
300
200
100
0
0
200
400
600
800
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
FWD
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
800
600
I_{RRM Low T}
400
200
0
1000 I _C (A) 1200
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
600
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
8
R gon ( Ω) 10
FWD
I_{RRM High T}
I_{RRM Low T}
8 R _gon ( Ω)
10
copyright Vincotech
16
03 Jun. 2015 / Revision 4