70-W212NMA600NB04-M200P60 Datasheet, PDF (16/31 Pages) Vincotech – Mixed voltage NPC

70-W212NMA600NB04-M200P60
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D4)
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
80
80
70
70
Q_rr
60
60
Q_rr
50
50
40
40
30
30
Q_rr
20
20
10
10
0
0
At
200
400
600
800
1000
1200
I C (A)
0
0
2
4
6
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
FWD
Q_rr
Q_rr
Q_rr
8
R gon ( Ω) ¹⁰
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
700
600
500
400
300
200
100
0
0
200
400
600
800
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
FWD
I_RRM
I_RRM
I_RRM
1000
1200
I C (A)
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
700
600
500
400
300
200
100
0
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
FWD
I_RRM
I_RRM
I_RRM
8
R gon ( Ω) ¹⁰
copyright Vincotech
16
17 Mar. 2015 / Revision 1