70-W212NMA600NB02-M200P62 Datasheet, PDF (16/31 Pages) Vincotech – Mixed voltage NPC

70-W212NMA600NB02-M200P62
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
80
70
60
50
40
30
20
10
0
0
At
200
400
600
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D4)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
80
70
Q_rr
60
Q_rr
50
40
30
Q_rr
20
10
800
1000
1200
I C (A)
0
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
700
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
700
600
600
I_RRM
I_RRM
500
500
I_RRM
400
400
300
300
200
200
100
100
0
0
200
400
600
800
1000
1200
I C (A)
0
0
2
4
6
At
T_j =
V_CE =
V_GE =
R_gon =
25/125/150 °C
350
V
±15
V
1
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125/150 °C
350
V
600
A
±15
V
FWD
Q_rr
Q_rr
Q_rr
8
R gon ( Ω) ¹⁰
FWD
I_RRM
I_RRM
I_RRM
8
R gon ( Ω) ¹⁰
copyright by Vincotech
16
Revision: 1.2