30-F212R6A050SC-M447-E-PM Datasheet, PDF (10/18 Pages) Vincotech – IGBT4 technology for low saturation losses

30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
10²
10¹
10⁰
T1,T2,T3,T4,T5,T6 IGBT
10uS
100uS
1mS
10mS
100mS
DC
10^-1
10⁰
10¹
10²
At
D=
T_h =
V_GE =
T_j =
single pulse
80
ºC
±15
V
T_jmax
ºC
10^{3 V} CE ^(V)
Figure 27
T1,T2,T3,T4,T5,T6 IGBT
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
17,5
15
12,5
10
7,5
5
2,5
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V_CE =
1200
V
T_j ≤
175
ºC
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
17,5
T1,T2,T3,T4,T5,T6 IGBT
15
240V
12,5
960V
10
7,5
5
2,5
0
0
25
At
I_C =
50
50
75 100 125 150 175 200 225
Q g (nC)
A
Figure 28
T1,T2,T3,T4,T5,T6 IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
800
600
400
200
0
12
13
14
15
16
17
18
19 _{V GE (V)} 20
At
V_CE ≤
1200
V
T_j =
175
ºC
Copyright by Vincotech
10
Revision: 1