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30-F212R6A050SC-M447-E-PM Datasheet, PDF (1/18 Pages) Vincotech – IGBT4 technology for low saturation losses
flowPACK 2
Features
● Inverter, blocking diodes
● Built-in thermistor
● IGBT4 technology for low saturation losses
Target Applications
● Power Regeneration
Types
● 30-F212R6A050SC-M447E
● 30-F212R6A050SC01-M447E10
30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
1200V/50A
flowPACK 2
Schematic
Tj=25°C, unless otherwise specified
Parameter
D7,D8
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
T1,T2,T3,T4,T5,T6
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
VCE ≤ 1200V, Tj ≤ Top max
Tj=Tjmax
Tj≤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
V
154
A
208
1270
A
2400
A2s
189
W
287
150
°C
1200
V
59
A
76
150
A
100
A
163
W
247
20
V
10
µs
800
V
175
°C
Copyright by Vincotech
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Revision: 1