DOC200103 Datasheet, PDF (3/20 Pages) Vectron International, Inc – Specification, Hybrid TCXO

3.2 Item Identification. External packaging choices are either metal flatpacks or DDIP with either
Sinewave or CMOS logic output. Unique Model Number Series’ are utilized to identify device
package configurations and output waveform as listed in Table 1.
3.3 Absolute Maximum Ratings.
a. Supply Voltage Range (V_CC):
b. Storage Temperature Range (T_STG):
c. Junction Temperature (T_J):
d. Lead Temperature (soldering, 10 seconds):
e. Output Source/Sink Current
-0.5Vdc to +7.0Vdc (CMOS)
-65°C to +125°C
+175°C
+300°C
±50 mA
3.4 Design, Parts, Materials and Processes, Assembly, Inspection and Test.
3.4.1
Design. The ruggedized designs implemented for these devices are proven in military and
space applications under extreme environments. All designs utilize a 4-point crystal mount.
When Class S is specified, a radiation tolerance of 100krad (Si) (RHA level R) is included
without altering the device’s internal topography. For all Class S and Class B products,
components meet the Element Evaluation requirements of MIL-PRF-55310, Appendix B. If
Design Pedigree Code “E” is chosen, Enhanced Element Evaluation per Appendix A will be
performed.
3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting
passive chip component values to offset component tolerances, there will not be fundamental
changes to the design or assembly or parts, materials and processes after first product delivery
of that item without written approval from the procuring activity.
3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-
PRF-55310. These designs have also passed extended dynamic levels of at least:
Sine Vibration: MIL-STD-202, Method 204, Condition G (30g pk.)
Random Vibration: MIL-STD-202, Method 214, Condition II-J (43.92g rms)
Mechanical Shock: MIL-STD-202, Method 213, Condition F (1500g, 0.5ms)
3.4.2
Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high
reliability devices produced to this specification.
a. Gold metallization of package elements without a barrier metal.
b. Zinc chromate as a finish.
c. Cadmium, zinc, or pure tin external or internal to the device.
d. Plastic encapsulated semiconductor devices.
e. Ultrasonically cleaned electronic parts.
f. Heterojunction Bipolar Transistor (HBT) technology.
3.4.3
Assembly. Manufacturing utilizes standardized procedures, processes and verification
methods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.
MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened part
numbers to further verify lot pedigree. Traceability of all components and production lots are
SIZE ^{CODE IDENT NO.}
A
00136
UNSPECIFIED TOLERANCES
N/A
DWG NO.
DOC200103
REV. SHEET
C
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