SUM40N05-19L Datasheet, PDF (4/5 Pages) Vaishali Semiconductor – N-Channel 55-V (D-S), 175C MOSFET, Logic Level

SUM40N05-19L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
100
V_GS = 10 V
2.0
I_D = 20 A
Source-Drain Diode Forward Voltage
1.6
T_J = 150_C
1.2
10
T_J = 25_C
0.8
0.4
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
70
66
I_D = 10 mA
62
58
54
50
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
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4
Document Number: 72386
S-31922—Rev. A, 15-Sep-03