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SUM40N05-19L Datasheet, PDF (2/5 Pages) Vaishali Semiconductor – N-Channel 55-V (D-S), 175C MOSFET, Logic Level
SUM40N05-19L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 55 V, VGS = 0 V
VDS = 55 V, VGS = 0 V, TJ = 125_C
VDS = 55 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 25 V, VGS = 10 V, ID = 35 A
f = 1.0 MHz
VDD = 25 V, RL = 0.3 W
ID ] 35 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 35 A, VGS = 0 V
IF = 35 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
55
V
1.0
2.0
3.0
"100
nA
1
50
mA
250
40
A
0.0155 0.019
0.033
W
0.040
0.020 0.025
50
S
885
185
pF
80
10.5
13
4
nC
4.8
5.0
W
5
8
18
30
ns
20
30
100
150
35
A
80
1.0
1.5
V
25
40
ns
1.5
2.5
A
0.019 0.05
mC
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Document Number: 72386
S-31922—Rev. A, 15-Sep-03