V10PM12_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mountnull Trench MOS Barrier Schottky Rectifier

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V10PM12
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
11
TM = 122 °C
10
9
8
7
6
5
4
T_A = 25 °C
3
2
1 ^TM ^Measured
at the Cathode Band Terminal
0
0
25 50
75 100
125 150
Mount Temperature (°C)
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
9
D = 0.8
8
D = 0.5
D = 0.3
7
D = 0.2
6
D = 0.1
D = 1.0
5
4
3
T
2
1
D = t_p/T
t_p
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
100
Junction to Ambient
10
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1
1
10
100
t -Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 14-Apr-15
3
Document Number: 89937
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