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V10PM12_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mountnull Trench MOS Barrier Schottky Rectifier
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V10PM12
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
TA = 25 °C
TA = 125 °C
VF (1)
0.60
0.75
0.53
0.63
Reverse current
TA = 25 °C
2.9
VR = 90 V
TA = 125 °C
IR (2)
2.0
TA = 25 °C
-
VR = 120 V
TA = 125 °C
4.8
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
MAX.
-
0.83
-
0.71
-
-
400
28
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PM12
Typical thermal resistance
RJA (1)
62
RJM (2)
4
Notes
(1) Free air mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10PM12-M3/86A
0.10
86A
V10PM12-M3/87A
0.10
87A
V10PM12HM3_A/H (1)
0.10
H
V10PM12HM3_A/I (1)
0.10
I
Note
(1) Automotive grade
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 14-Apr-15
2
Document Number: 89937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000