V10PN50-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10PN50-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current
V_R = 50 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.40
0.47
0.30
0.40
50
32
MAX.
-
0.55
-
0.49
1500
85
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PN50
Typical thermal resistance
R_JA ^{(1) (2)}
70
R_JM ⁽³⁾
4
Notes
(1) _{Free air, mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient}
(2) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(3) _{Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance RJM - junction-to-mount measured at cathode side}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10PN50-M3/86A
0.10
86A
V10PN50-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
11
10
T_M = 130 °C, R_thJM = 4 °C/W
9
8
7
6 T_A = 25 °C, R_thJA = 70 °C/W
5
4
3
2
1 T_M measured at cathode side
0
0
25
50
75 100 125 150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
5.6
5.2
4.8
D = 0.8
D = 0.3 ^{D = 0.5}
4.4
D = 0.2
4.0
D = 0.1
3.6
D = 1.0
3.2
2.8
2.4
2.0
T
1.6
1.2
0.8
0.4
D = t_p/T
t_p
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 04-Dec-13
2
Document Number: 89965
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