V10PN50-M3_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10PN50-M3
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.30 V at I_F = 5 A
TMBS^® eSMP^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 10 A
T_J max.
Package
10 A
50 V
180 A
0.40 V
150 °C
TO-277A (SMPC)
Diode variation
Single die
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Maximum DC reverse voltage
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F ⁽¹⁾
I_F ⁽²⁾
V_DC
I_FSM
Operating junction and storage temperature range
T_J, T_STG
Notes
(1) _{Mounted on 30 mm x 30 mm 2 oz. pad PCB}
(2) _{Free air, mounted on recommended copper pad area}
V10PN50
10N5
50
10
5.3
35
180
-40 to +150
UNIT
V
A
V
A
°C
Revision: 04-Dec-13
1
Document Number: 89965
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000