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| UF634_15 Datasheet, PDF (8/9 Pages) Unisonic Technologies – ADVANCED POWER MOSFET | |||
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UF634
ï® TYPICAL CHARACTERISTICS(Cont.)
Source- Drain Diode Forward Voltage
VGS=0V
20 250μs Pulse Test
10
8
125°C 25°C
2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Power MOSFET
Capacitance vs. Drain-Source Voltage
100
750
CISS
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
COSS
500
250
CRSS
VGS=0V
f = 1MHz
0
10-1
100
101
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 9
QW-R502-454.F
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