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| UF634_15 Datasheet, PDF (4/9 Pages) Unisonic Technologies – ADVANCED POWER MOSFET | |||
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UF634
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=250V
VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=8.1A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=200V, ID=8.1A
(Note 1, 2)
VDD=125V, ID=8.1A, RG=12â¦
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 2)
VSD
IS=8.1A, VGS=0V, TJ=25°C
Maximum Body-Diode Continuous Current
IS
Pulsed-Source Current (Note 1)
ISM
Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. Pulse Test: Pulse Width = 250µs, Duty Cycle â¤2%.
3. Essentially Independent of Operating Temperature.
MIN TYP MAX UNIT
250
V
10 µA
±100 nA
2.0
4.0 V
0.45 â¦
730 950 pF
110 130 pF
50 60 pF
30 40 nC
5.8
nC
13.5
nC
13 40 ns
14 40 ns
53 120 ns
21 50 ns
1.5 V
8.1 A
32.4 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-454.F
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