UF630_15 Datasheet, PDF (8/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF630
 TYPICAL CHARACTERISTICS (Cont.)
2000
1600
1200
Capacitance vs. Drain to Source Voltage
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD, C_DS
C_RSS = C_GD
C_OSS = C_DS + C_GD
800
C_ISS
400
C_OSS
C_RSS
0
1
10
20
30
40
50
Drain to Source Voltage, V_DS (V)
Power MOSFET
Drain Current vs. Source to Drain Voltage
40
35
30
25
20
15
10
5
0
1
0.5
1
1.5
2
2.5
3
Source to Drain Voltage, V_SD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-049.J