UF630_15 Datasheet, PDF (3/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF630
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
200
V
Drain-Gate Voltage (R_GS = 20kΩ, T_J =25°C ~125°C)
V_DGR
200
V
Gate-Source Voltage
V_GSS
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
I_D
9
A
I_DM
36
A
Single Pulse Avalanche Energy (Note 3)
E_AS
TO-220/TO-262
150
mJ
73
TO-220F1/ TO-220F
38
Power Dissipation
TO-220F2
P_D
42
W
TO-251/ TO-252
46
SOP-8
5
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J.
3. L = 4mH, I_AS = 8.3A, V_DD = 20V, R_G = 25 Ω, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
TO-220/TO-262
TO-220F1/ TO-220F
Junction to Ambient
TO-220F2
TO-251/ TO-252
SOP-8
TO-220/TO-262
TO-220F1/ TO-220F
Junction to Case
TO-220F2
TO-251/ TO-252
SOP-8
SYMBOL
θ_JA
θ_JC
RATING
62.5
100.3
83
1.71
3.31
2.98
2.7
24
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-049.J