UF840 Datasheet, PDF (7/8 Pages) Unisonic Technologies – 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET

UF840
TYPICAL CHARACTERISTICS(Cont.)
Figure 13. Transfer Characteristics
100 _{Pulse Duration=80DŽs}
Duty Cycle = 0.5% Max
V_DSœ50V
10
1
TJ = 150Â¥
0.1
TJ = 25Â¥
0.01
0
2
4
6
8
10
Gate to Source Voltage, V_SD (V)
Figure 15. Normalized Drain to Source on
Resistance vs. Junction Temperature
3.0
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
2.4 ^VGS ^{=10V, I}D^=4.4A
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, T_J (Â¥)
Figure 17. Capacitance vs. Drain to Source Voltage
3000
2400
1800
1200
600
C_ISS
V_GS=0V,
f=1MHz
C_ISS =C_GS+C_GD
C_RSS=C_GD
COSS•CDS+CGD
C_RSS
COSS
0
1
2
5
10 2
5
10²
Drain to Source Voltage, V_DS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MOSFET
Figure 14. Drain to Source on Resistance vs.
Voltage and Drain Current
10
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
8
6
V_GS=10V
4
2
VGS=20V
0
0
8
16
24
32
40
Case Temperature, T_C (Â¥)
Figure 16. Normalized Drain to Source Breakdown Voltage
vs. Junction Temperature
1.25
ID=250DŽA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, TJ (Â¥)
Figure 18. Transconductancevs. Drain Current
15 _{Pulse Duration=80DŽs}
Duty Cycle = 0.5% Max
12 V_DSœ50V
9
6
T_J= 25Â¥
T_J= 150Â¥
3
0
0
3
6
9
12
15
Drain Current, I_D (A)
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QW-R502-047,C