UF840 Datasheet, PDF (6/8 Pages) Unisonic Technologies – 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET

UF840
TYPICAL CHARACTERISTICS
Figure 7. Normalized Power Dissipation vs. Case
Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
Case Temperature, T_C (Â¥)
Figure 9. Normalized Maximum Transient
Thermal Impedance
1
0.5
0.2
10^-1 0.1
10^-2
Single
pulse
10^-3
10^-5 10^-4
0.05
0.02
P_DM
t1
0.01
t2
Notes:
Duty Factor: D=t1/t2
Peak T_J =P_DM×Z_ȬJC×R_ȬJC +T_C
10^-3 10^-2 10^-1
1
10
RectangularPulse Duration, t₁ (s)
Figure 11. Output Characteristics
15
V_GS=10V
12
Pulse Duration=80DŽs
Duty Cycle = 0.5% Max
V_GS=6.0V
9
VGS=5.5V
6
3
V_GS=5.0V
VGS=4.5V
V_GS=4.0V
0
0
50
100
150 ²⁰⁰ 250
Drain to Source Voltage, V_DS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MOSFET
Figure 8. Maximum ContionuousDrain Current
vs. Case Temperature
10
8
6
4
2
0
25
50
75
100 125 ¹⁵⁰
Case Temperature, T_C (Â¥)
Figure 10. Forward Bias Safe Operating Area
100 _{Operation in This Region is}
Limited by r_{DS (on)}
10
10DŽs
100DŽs
1ms
10ms
1
TC=25Â¥
T_J=Max Rated
Single Pulse
0.1
1
10
DC
10²
10³
Drain to Source Voltage, V_DS (V)
Figure 12. Saturation Characteristics
15 _{Pulse Duration=80È°s}
Duty Cycle = 0.5% Max
12
V_GS=10V
9
V_GS=6.0V
VGS=5.5V
6
3
V_GS=5.0V
V_GS=4.0V
V_GS=4.5V
0
0
3
6
9
12
15
Drain to Source Voltage, V_DS (V)
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QW-R502-047,C