UF830 Datasheet, PDF (7/8 Pages) Microsemi Corporation – ULTRA FAST RECOVERY RECTIFIER

UF830
„ TYPICAL CHARACTERISTICS (Cont.)
Transfer Characteristics
5
Pulse Duration=80μs
Duty Cycle = 0.5% Max
4 ^{VDS>ID(ON)×rDS(ON)MAX}
3
T_J = 125°C
2
T_J = 25°C
1
T_J = -40°C
0
01
2
3
4
5
6
7
Gate to Source Voltage, V_GS (V)
Normalized Drain to Source on Resistance vs.
2.2
Junction Temperature
Pulse Duration=80μs
Duty Cycle = 0.5% Max
1.8 VGS =10V, ID=2.5A
1.4
1.0
0.6
0.2
-60 -40 -20 0 20 40 60 80 100 120 140
Junction Temperature, T_J (°C)
Capacitance vs. Drain to Source Voltage
2000 _{VGS=0V, f=1MHz}
C_ISS=C_GS+C_GD
1600
C_RSS=C_GD
C_OSS=C_DS+C_GS
1200
800
400
C_ISS
C_OSS
C_RSS
0
1
10
20
30
30
50
Drain to Source Voltage, V_DS (V)
Power MOSFET
Drain to Source on Resistance vs.
Gate Voltage and Drain Current
10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
8
6
V_GS=10V
4
V_GS=20V
2
0
0
4
8
12
16
20
Case Temperature, T_C (°C)
Normalized Drain to Source Breakdown Voltage vs.
1.25
I_D=250μA
Junction Temperature
1.15
1.05
0.95
0.85
0.75
-40 -20
0 20 40 60 80 100 120 140 160
Junction Temperature, T_J (°C)
Transconductance vs. Drain Current
5
Pulse Duration=80μs
Duty Cycle = 0.5% Max
T_J= -40°C
4
T_J= 25°C
3
T_J= 125°C
2
1
0
0
1
2
3
4
5
Drain Current, I_D (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-046,G