UF830 Datasheet, PDF (3/8 Pages) Microsemi Corporation – ULTRA FAST RECOVERY RECTIFIER

UF830
Power MOSFET
„ ELECTRICAL SPECIFICATIONS(Cont.) (T_A =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_G
Q_GS
Q_GD
V_GS=10V, I_D=4.5A
V_DS=0.8×Rated BV_DSS
I_G(REF)=1.5mA (Note 3)
Input Capacitance
C_ISS
Output Capacitance
C_OSS
V_DS=25V, V_GS=0V, f=1.0MHz
Reverse Transfer Capacitance
C_RSS
Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP
22
3.5
11
600
100
20
MAX UNIT
32 nC
nC
nC
pF
pF
pF
„ INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL MIN TYP MAX UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
L_D
3.5
nH
4.5
nH
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
L_S
7.5
nH
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
„ SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
V_SD
T_J=25°C,I_SD=4.5A, V_GS=0V(Note 1)
I_SD
I_SDM
Note 2
t_rr
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs 180
Reverse Recovery Charge
Q_RR
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs 0.96
NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX
1.6
5.5
18
760
4.3
UNIT
V
A
A
ns
μC
D
G
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-046,G