MJE13009_12 Datasheet, PDF (7/9 Pages) Unisonic Technologies – SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

MJE13009
„ TYPICAL CHARATERISTICS
NPN SILICON TRANSISTOR
Fig. 3 Forward Bias Power Derating
1
Second Breakdown
0.8
Derating
0.6
Thermal
0.4
Derating
0.2
0
20
40
60
80 100 120 140 160
Case Temperature, TC (°C)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when TC ≥ 25°C.
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Fig. 1 may
be found at any case temperature by using the appropriate curve
on Fig. 3.
TJ(PK) may be calculated from the data in Fig. 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Fig. 2) is discussed in the applications information
section.
Fig. 4 Typical Thermal Response [Z_θJC(t)]
1
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 _0.01
Single Pulse
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1
Z_θJC(t) = r(t) θJC
P(PK)
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(PK) – TC = P(PK) Z_θJC(t)
t1
t2
Duty Cycle, D = t1/t2
2
5
10 20
Time, t (ms)
50 100 200
500 1.0k
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