MJE13009_12 Datasheet, PDF (2/9 Pages) Unisonic Technologies – SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

MJE13009
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (T_A = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V_CEO
400
V
Collector-Emitter Voltage (V_BE=-1.5V)
V_CEV
700
V
Emitter Base Voltage
V_EBO
9
V
Collector Current
Continuous
I_C
Peak (Note 3)
I_CM
12
24
A
Base Current
Continuous
I_B
Peak (Note 3)
I_BM
6
A
12
Emitter Current
Continuous
I_E
Peak (Note 3)
I_EM
TO-220
18
A
36
2
Power Dissipation
TO-220F
0.7
W
TO-3P
80
TO-220
P_D
16
Derate above 25℃
TO-220F
5.6
mW/℃
Junction Temperature
Storage Temperature
TO-3P
T_J
T_STG
640
+150
℃
-40 ~ +150
℃
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
„ THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F
TO-3P
TO-220
Junction to Case
TO-220F
TO-3P
SYMBOL
θ_JA
θ_JC
RATINGS
54
62.5
21
4
3.13
1.55
UNIT
℃/W
℃/W
„ ELECTRICAL CHARACTERISTICS (T_C= 25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
V_CBO=Rated Value
Emitter Cutoff Current
ON CHARACTERISTICS (Note)
DC Current Gain
Current-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
TEST CONDITIONS
V_CEO
I_CEV
I_EBO
I_C = 10mA, I_B = 0
V_BE(OFF) = 1.5V_DC
V_BE(OFF) = 1.5V_DC, T_C = 100℃
V_EB = 9V_DC, I_C = 0
h_FE1
h_{FE 2}
V_CE(SAT)
V_BE(SAT)
I_C = 5A, V_CE = 5V
I_C = 8A, V_CE = 5V
I_C = 5A, I_B = 1A
I_C = 8A, I_B = 1.6A
I_C = 12A, I_B = 3A
I_C = 8A, I_B = 1.6A, T_C = 100℃
I_C = 5A, I_B = 1A
I_C = 8A, I_B = 1.6A
I_C = 8A, I_B = 1.6A, T_C = 100℃
MIN TYP MAX UNIT
400
V
1
5
mA
1 mA
40
30
1V
1.5 V
3V
2V
1.2 V
1.6 V
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R203-024,F