81NXX_15 Datasheet, PDF (7/16 Pages) Unisonic Technologies – VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME

81CXX/81NXX
CMOS IC
 ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
MIN TYP MAX UNIT
Detect Voltage
V_DF
1
V_DF (T)
×0.98
V_DF (T)
V_DF (T)
×1.02
V
Hysteresis Range
V_HYS
1
V_DF
V_DF
V_DF
×0.02 ×0.05 ×0.08
V
Operating Voltage
Supply Current
V_IN
1 V_DF=1.6V ~ 6.0V
I_SS
2 V_IN=5.0V
0.7
10.0 V
2.0 4.2 μA
N-Channel
3 V_DS=0.5V, V_IN =5.0V
Output Current _{P- Channel}
I_OUT
4
V_DS=2.1V, V_IN=8.0V
(CMOS output)
13.0
mA
-15.4
mA
V_DF
Temperature Characteristics
∆V DF
∆TOPR × VDF
±100
ppm/°C
Transient Delay Time
(V_DR V_OUT inversion)
t_DLY *
5
V_IN changes from
0.6V ~ 10V
50
200 ms
V_DF (T): established detect voltage value
Release Voltage: V_DR = V_DF + V_HYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 16
QW-R502-039.U