81NXX_15 Datasheet, PDF (6/16 Pages) Unisonic Technologies – VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME

81CXX/81NXX
CMOS IC
 ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
Detect Voltage
V_DF
1
Hysteresis Range
V_HYS
1
Operating Voltage
Supply Current
N-Channel
Output Current _{P- Channel}
V_DF
Temperature Characteristics
Transient Delay Time
(V_DR V_OUT inversion)
V_IN
I_SS
I_OUT
∆V DF
∆TOPR × VDF
t_DLY *
1 V_DF=1.6V ~ 6.0V
2
V_IN=2.0V
V_IN=5.0V
3 V_DS=0.5V, V_IN =2.0V
4
V_DS=2.1V, V_IN=8.0V
(CMOS output)
5
V_IN changes from
0.6V ~ 10V
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
Detect Voltage
V_DF
1
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
Output Current _{P- Channel}
V_DF
Temperature Characteristics
Transient Delay Time
(V_DR V_OUT inversion)
V_HYS
V_IN
I_SS
I_OUT
∆V DF
∆TOPR × VDF
t_DLY *
1
1 V_DF=1.6V ~ 6.0V
2
V_IN =3.0V
V_IN =5.0V
3 V_DS=0.5V, V_IN =3.0V
4
V_DS=2.1V, V_IN=8.0V
(CMOS output)
5
V_IN changes from
0.6V ~ 10V
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
Detect Voltage
V_DF
1
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
Output Current _{P- Channel}
V_DF
Temperature Characteristics
Transient Delay Time
(V_DR V_OUT inversion)
V_HYS
V_IN
I_SS
I_OUT
∆V DF
∆TOPR × VDF
t_DLY *
1
1 V_DF=1.6V ~ 6.0V
2
V_IN=4.0V
V_IN=5.0V
3 V_DS=0.5V, V_IN=4.0V
4
V_DS=2.1V, V_IN=8.0V
(CMOS output)
5
V_IN changes from
0.6V ~ 10V
MIN
V_DF (T)
×0.98
V_DF
×0.02
0.7
TYP MAX
V_DF (T)
V_DF (T)
×1.02
V_DF
V_DF
×0.05 ×0.08
10.0
1.0 3.0
2.0 4.2
7.9
UNIT
V
V
V
μA
μA
mA
-15.4
mA
±100
ppm/°C
50
200 ms
MIN
V_DF (T)
×0.98
V_DF
×0.02
0.7
TYP MAX
V_DF (T)
V_DF (T)
×1.02
V_DF
V_DF
×0.05 ×0.08
10.0
1.3 3.4
2.0 4.2
10.1
UNIT
V
V
V
μA
μA
mA
-15.4
mA
±100
ppm/°C
50
200 ms
MIN
V_DF (T)
×0.98
V_DF
×0.02
0.7
TYP MAX
V_DF (T)
V_DF (T)
×1.02
V_DF
V_DF
×0.05 ×0.08
10.0
1.5 3.8
2.0 4.2
11.5
UNIT
V
V
V
μA
μA
mA
-15.4
mA
±100
ppm/°C
50
200 ms
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