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| 2N60 Datasheet, PDF (7/8 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET | |||
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2N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature
1.2
VGS=10V
ID=250ÇA
1.1
1.0
0.9
0.8
-100 -50 0
50 100 150 200
Junction Temperature, TJ (Â¥)
Max. Safe Operating Area
Operation in This Area
is Limited by RDS(on)
101
100Çs 10Çs
1ms
100
10m
Ds
C
10-1 TC=25Â¥
TJ=125Â¥
Single Pulse
10-2
100
101
102
103
Drain-Source Voltage, VDS (V)
Thermal Response
D=0.5
100
0.2
0.1
0.05
ÇJC (t) = 2.78Â¥/W Max.
Duty Factor, D=t1/t2
TJM -TC=PDMÃÇJC (t)
10-1 0.02
0.01
Single pulse
PDM
t1
t2
10-5 10-4 10-3 10-2 10-1 100 101
Square Wave Pulse Duration, t1 (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
On -Resistance vs. Temperature
3.0 VGS=10V
ID=4.05A
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0
50 100 150 200
Junction Temperature, TJ (Â¥)
Max. Drain Current vs. Case Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100 125 150
Case Temperature, TC (Â¥)
7 of 8
QW-R502-053,E
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