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2N60 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET
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2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25Â¥, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Drain Current Continuous
TC = 25°C
TC = 100°C
2.0
A
ID
1.26
A
Drain Current Pulsed (Note 2)
IDP
8.0
A
Avalanche Energy
Repetitive(Note 2)
EAR
Single Pulse(Note 3)
EAS
4.5
mJ
140
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Total Power Dissipation
TC = 25°C
Derate above 25°C
PD
45
W
0.36
W/Ċ
Junction Temperature
TJ
+150
Ċ
Storage Temperature
TSTG
-55 ~ +150
Ċ
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
θJA
θJc
RATINGS
112
112
54
54
12
12
4
4
UNIT
Ċ/W
ELECTRICAL CHARACTERISTICS (TJ =25Â¥, unless Otherwise specified.)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

SYMBOL
TEST CONDITIONS
BVDSS VGS = 0V, ID = 250µA
IDSS
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
¶BVDSS/
¶TJ
ID = 250 µA
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID =1A
VDS = 50V, ID = 1A (Note 1)
CISS
COSS
CRSS
VDS =25V, VGS =0V, f =1MHz
MIN TYP MAX UNIT
600
V
10 µA
100 µA
100 nA
-100 nA
0.4
V/Ċ
2.0
4.0 V
3.8 5
Ω
2.25
S
270 350 pF
40 50 pF
5
7 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-053,E
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