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MJE13009-K Datasheet, PDF (6/9 Pages) Unisonic Technologies – SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE13009-K
NPN SILICON TRANSISTOR
„ TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC(A)
3
5
8
12
TC(°C)
25
100
25
100
25
100
25
100
tSV(ns)
770
1000
630
820
720
920
640
800
„ SWITCHING TIME NOTES
tRV(ns)
100
230
72
100
55
70
20
32
tFI(ns)
150
160
26
55
27
50
17
24
tTI(ns)
200
200
10
30
2
8
2
4
tC(ns)
240
320
100
180
77
120
41
54
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to determine the total switching time. For this reason, the following
new terms have been defined.
tSV = Voltage Storage Time, 90% IB1 to 10% VCEM
tRV = Voltage Rise Time, 10–90% VCEM
tFI = Current Fall Time, 90–10% ICM
tTI = Current Tail, 10–2% ICM
tC = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tC) f
Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ tC. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which
are guaranteed at 100℃.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 9
QW-R223-007.A