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| MJE13009-K Datasheet, PDF (3/9 Pages) Unisonic Technologies – SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS | |||
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MJE13009-K
NPN SILICON TRANSISTOR
 ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS
Transition frequency
fT
IC = 500mA, VCE = 10V, f = 1MHz
Output Capacitance
COB VCB = 10V, IE = 0, f = 0.1MHz
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
tDLY
Rise Time
tR
Storage Time
tS
Fall Time
tF
Inductive Load, Clamped (Table 1, Fig. 13)
VCC = 125Vdc, IC = 8A
IB1 = IB2 = 1.6A, tP = 25μs
Duty Cycle â¤1%
Voltage Storage Time
Crossover Time
tS
IC=8A, VCLAMP=300V, IB1=1.6A
tC
VBE(OFF) = 5V, TC = 100°C
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
MIN TYP MAX UNIT
4
180
MHz
pF
0.06 0.1 µs
0.45 1 µs
1.3 4 µs
0.2 0.7 µs
0.92 2.3 µs
0.12 0.7 µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R223-007.A
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