UF740 Datasheet, PDF (5/6 Pages) Unisonic Technologies – 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET

UF740
TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)
MOSFET
Forward Bias Safe Operating Area
100
10È°s
10
100È°s
1ms
OPERATION IN THIS
1
REGION IS LIMITED BY
RDS(ON)
T_C=25Â¥
T_J=MAX RATED
0.1 ^{SINGLE PULSE}
1
10
10₂
10ms
DC
10₃
Drain to Source Voltage, V_DS (V)




Saturation Characteristics
15 _{PULSE DURATION=80È°S}
DUTY CYCLE= 0.5% MAX
12
VGS=10V
V_GS=6.0V
VGS=5.5V
9
V_GS=5.0V
6
3
VGS=4.5V
V_GS=4.0V
0
0
2
4
6
8
10
Drain to Source Voltage, VDS (V)
Normalized Drain to Source Breakdown Voltage vs. Junction
Temperature
1.25 _ID=250È°A
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100120 140 160
Junction Temperature, T_J (Â¥)
Output Characteristics
15
V_GS = 10V
PULSE DURATION=80È°S
V_GS = 6.0V
DUTY CYCLE = 0.5% MAX
12
VGS = 5.5V
9
VGS = 5.0V
6
VGS = 4.5V
3
VGS = 4.0V
0
0
40
80
120
160 200
Drain to Source Voltage, V_DS (V)


Transfer Characteristics
100 _{PULSE DURATION=80È°S}
DUTY CYCLE = 0.5% MAX
V_DSœ50V
10
T_J = 150Â¥
1
T_J = 25Â¥
0.1
0
2
4
6
8
10
Gate to Source Voltage, V_SD (V)
Capacitance vs. Drain to Source Voltage
2500
2000
1500
1000
500
V_GS=0V, f=1MHz
CISS=CGS+CGD
C_RSS=C_GD
COSS•CDS+CGD
C_ISS
C_RSS
C_OSS
0
1²
5 10 2
5 10² 2
5 10³
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-078,A