UF740 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET

UF740
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25Â¥, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (T_J =25Â¥~125Â¥)
Drain to Gate Voltage (R_GS = 20kΩ) (T_J =25¥~125¥)
Gate to Source Voltage
Drain Current
Continuous
T_C = 100Â¥
Pulsed
Maximum Power Dissipation
Derating above 25Â¥
SYMBOL
V_DS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
RATINGS
400
400
±20
10
6.3
40
125
1.0
UNIT
V
V
V
A
A
A
W
W/Ċ
Single Pulse Avalanche Energy Rating
(V_DD=50V, starting T_J =25¥, L=9.1µH, R_G=25Ω, peak I_AS = 10A)
E_AS
520
mJ
Operating Temperature Range
T_OPR
-55 ~ +150
Ċ
Storage Temperature Range
T_STG
-55 ~ +150
Ċ
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case
SYMBOL
θ_JA
θ_Jc
RATINGS
62.5
1.0
ELECTRICAL CHARACTERISTICS (T_C =25Â¥, Unless Otherwise Specified.)
UNIT
Ċ/W
PARAMETER
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance


SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
BV_DSS V_GS = 0V, I_D = 250µA
400
V
V_GS(THR) V_GS = V_DS, I_D = 250µA
2.0
I_D(ON) V_DS >I_D(ON) x R_DS(ON)MAX, V_GS =10V
10
I_DSS
V_DS = Rated BV_DSS, V_GS = 0V
V_DS=0.8 x Rated BV_DSS, V_GS=0V,T_J=125Â¥
I_GSS V_GS = ±20V
4.0 V
A
25 µA
250 µA
±500 nA
R_DS(ON) V_GS = 10V, I_D = 5.2A
0.47 0.55 Ω
g_FS V_DS ≥ 50V, I_D = 5.2A
5.8 8.9
S
t_DLY(ON)
t_R
t_DLY(OFF)
t_F
Q_G(TOT)
Q_GS
Q_GD
C_ISS
C_OSS
C_RSS
V_DD = 200V, I_D ≈ 10A,
R_GS = 9.1Ω, R_L = 20Ω, V_GS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V_GS = 10V, I_D = 10A
V_DS = 0.8 x Rated BV_DSS
I_G(REF) = 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
V_GS = 0V, V_DS =25V, f = 1.0MHz
15 21 ns
25 41 ns
52 75 ns
25 36 ns
41 63 nC
6.5
nC
23
nC
1250
pF
300
pF
80
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-078,A