MMBTA06 Datasheet, PDF (5/5 Pages) Samsung semiconductor – NPN (DRIVER TRANSISTOR)

MMBTA06
TYPICAL CHARACTERISTICS(Cont.)



Collector Saturation Region
1.0
TJ=125Â¥
0.8
I_C=50
mA
0.6
I_C=100 I_C=250 I_C=500
mA mA mA
0.4
NPN SILICON TRANSISTOR
Base-Emitter Temperature Coefficient
-0.8
-1.2
-1.6
RȬVB for VBE
-2.0
0.2
-2.4
0 ^IC=10mA
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Collector Current, I_C (mA)


-2.8
0.5 1.0 2.0 5.0 10 20 50 100200 500
Collector Current, I_C (mA)




























































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