MMBTA06 Datasheet, PDF (4/5 Pages) Samsung semiconductor – NPN (DRIVER TRANSISTOR)

MMBTA06
TYPICAL CHARACTERISTICS
Current -Gain Bandwidth Product
300
200
V_CE=2.0V
T_J=25Â¥
100
70
50
30
2.0 3.0 5.0 7.010 20 30 50 70 100 200
Collector Current, IC (mA)




1.0K
700
500
300
200
Switching Time
t_s
100
t_f
70
50
V_CC=40V
30 _IC/IB=10
tr
20 IB1=IB2
10 ^{TJ=25Â¥td@VBE(off)=0.5V}
5.0 7.010 20 30 50 70100 300 500
Collector Current, I_C (mA)




DC Current Gain
400
T_J=125Â¥
VCE=1.0V
200
25Â¥
100
-55Â¥
80
60
40
0.5 1.0 2.0 3.0 5.010 20 30 50100200300500
Collector Current, I_C (mA)


NPN SILICON TRANSISTOR
Capacitance
80
60
T_J=25Â¥
40
C_ibo
20
10
Cobo
8.0
6.0
4.0
0.1 0.2 0.5 10 20 5.0 10 20 50 100
Reverse Voltage, V_R (V)


Active-Region Safe Operating Area
1.0K
700
1.0ms ^100µs
500
300
T_C=25Â¥
1.0s
200
100 TA=25Â¥
70
50
MMBTA 05
30
MMBTA06
20
Current Limit
Thermal Limit
Second Breakdown Limit
10
1.0 2.0 3.0 5.07.010 20 30 50 70100
Collector-Emitter Voltage, V_CE (V)


oONp Voltages
1.0
T_J=125Â¥
0.8 VBE(SAT)@IC/IB=10
0.6
V_BE(ON)@V_CE=1.0V
0.4
0.2
V_CE(SAT)@I_C/I_B=10
0
0.5 1.0 2.0 5.0 10 20 50 100 200 500
Collector Current, I_C (mA)


UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-041,B