MMBT2222A Datasheet, PDF (5/6 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
500
V_CE=5V
400
300
125Â¥
200
25Â¥
100
-40Â¥
0
0.1 0.3 1
10 30 100 300
Collector Current , I_C (mA)
Base-Emitter Saturation Voltage vs .
Collector Current
Ȧ=10
1
0.8
-40Â¥
25Â¥
0.6
125Â¥
0.4
1
10
100
500
Collector Current , IC (mA)
Base-Emitter Saturation Voltage
vs. Collector Current
500
V_CB=40V
100
10
1
0.1
25 50 75 100 125 150
Ambient Temperature , T_A (Â¥)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs .
Collector Current
0.4
Ȧ=10
0.3
0.2
0.1
1
125Â¥
25Â¥
-40Â¥
10
100
500
Collector Current , I_C (mA)
Base-Emitter on Voltage vs. Collector
Current
1
V_CE=5V
0.8
-40Â¥
25Â¥
0.6
125Â¥
0.4
0.2
0.1
1
10 25
Collector Current , IC (mA)


Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
20
16
12
C_te
8
C_ob
4 _f=1MHz
0.1
1
10
100
Reverse Bias Voltage (V)
5 of 6
QW-R206-019,D