MMBT2222A Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
75
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Base Voltage
V_EBO
6
V
Collector Current
Ic
0.6
A
Power Dissipation
Junction Temperature
Storage Temperature
SOT-23
SOT-523
P_C
350
mW
150
mW
T_J
+150
Ċ
T_STG
-55 ~ +150
Ċ
Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SOT-23
SOT-523
SYMBOL
θJA
RATINGS
15
833
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV_CBO I_C=10µA, I_E=0
75
Collector-Emitter Breakdown Voltage BV_CEO I_C=10mA, I_B=0
40
Emitter-Base Breakdown Voltage
BV_EBO I_E=10µA, I_C =0
6
Collector Cutoff Current
I_CBO
V_CB=60V, I_E=0
V_CB=60V, I_E=0, Ta=150°C
Emitter Cutoff Current
I_EBO
V_EB=3.0V, I_C=0
Base Cutoff Current
I_BL
V_CE=60V, V_EB(OFF)=3.0V
Collector Cutoff Current
I_CEO
V_CE=60V, V_EB(OFF)=3.0V
ON CHARACTERISTICS
I_C =0.1mA, V_CE=10V
35
I_C =1.0mA, V_CE=10V
50
I_C =10mA, V_CE=10V
75
DC Current Gain
h_FE
I_C =10mA, V_CE=10V, Ta= -55°C 35
I_C =150mA, V_CE=10V*
100
I_C =150mA, V_CE=1.0V*
50
I_C =500mA, V_CE=10V*
40
Collector-Emitter Saturation Voltage*
V_CE(SAT)
I_C =150mA, I_B=15mA
I_C =500mA, I_B=50mA
Base-Emitter Saturation Voltage*
V_BE(SAT)
I_C =150mA, I_B=15mA
I_C =500mA, I_B=50mA
0.6
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje) ^{IC=20mA, VCB=20V, f=300MHz}
Transition Frequency
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
f_T
Cobo
Cibo
rb'Cc
NF
I_C =20mA, V_CE=20V, f=100MHz 300
V_CB=10V, I_E=0, f=100kHz
V_EB=0.5V, I_C=0, f=100kHz
I_C=20mA, V_CB=20V, f=31.8MHz
I_C=100µA, V_CE=10V, Rs=1.0kΩ
f=1.0kHz


TYP
MAX
0.01
10
10
20
10
300
0.3
1.0
1.2
2.0
60
8.0
25
150
4.0
UNIT
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
Ω
MHz
pF
pF
pS
dB
UNISONIC TECHNOLOGIES CO., LTD
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