US112S Datasheet, PDF (4/4 Pages) Unisonic Technologies – Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection

UTC US112S/N
SCR
Figure.5:Relative variation of holding current vs
gate-cathode resistance(typical values)
IH(Rgk)/IH(Rgk=1kΩ)
(US112S)
5.0
Ta=25℃
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Rgk(kΩ)
0.0
1E-2
1E-1
1E+0
1E+1
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
4.0
3.5
VD=0.67* VDRM
Tj=125℃
3.0 ^Rgk=220Ω
2.5
2.0
1.5
1.0
0.5
0.0
0
Cgk(nF)
25
50
75
100
125
150
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.0
Tj=125℃
VD=0.67* VDRM
1.0
Rgk(Ω)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig.8: Surge peak on-state current vs number of cycles
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.0
Tj=125℃
VD=0.67* VDRM
1.0
Rgk(Ω)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2000
1000
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
values of I²t.
ITSM(A),I²t(A²s)
ITSM
Tjinitial=25℃
US112N
dI/dt
limitation
100
US112S
US112N
I ²t
US112S
10
0.01
tp(ms)
0.10
1.00
10.00
Fig.10: On-state characteristics(maximum values).
ITSM
200
Tj=max:
100 Vto=0.85V
Rd=30mΩ
Tj=Tjmax.
10
Tj=25℃
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
UTC UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-013,B