US112S Datasheet, PDF (3/4 Pages) Unisonic Technologies – Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection

UTC US112S/N
SCR
Figure.1:Maximum average power
dissipation vs average on-state current.
P(W )
12
11 α=180°
10
9
8
7
6
5
4
360°
3
2
α
1
IT(av)(A)
0
0
1
2
3
4
5
6
7
8
9
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
K=<Zth(j-c)/Rth(j-c)>
1.0
Figure.2:Average and D.C. on-state current
IT(av)(A)
14
vs case temperature
DC
12
10
α=180°
8
6
4
2
Tcase(℃)
0
0
25
50
75
100
12
5
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
K=<Zth(j-a)/Rth(j-a)>
1.00
0.5
0.10
0.2
0.1
1E-3
1E-2
tp(s)
1E-1
1E+0
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.0
1.8
1.6
IGT
1.4
1.2
IH&IL
1.0
Rgk=1kΩ
0.8
0.6
0.4
0.2
Tj(℃)
0.0
-40 -20
0
20 40 60 80 100 120 140
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(℃)
0.0
-40 -20
0
20
40
60
IH&IL
80 100 120 140
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-013,B