 English |
|
|
|
|
|
|
|
| UF830K-MT Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
| |||
| ◁ |
UF830K-MT
Power MOSFET
ï® ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
ID(ON)
IDSS
IGSS
ID=250μA, VGS=0V
500
VDS>ID(ON)ÃRDS(ON)MAX, VGS=10V 4.5
VDS= Rated BVDSS, VGS=0V
VDS=0.8ÃRated BVDSS
VGS=0V, TJ= 125°C
VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VGS=VDS, ID=250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON) ID=2.5A, VGS=10V (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, IDâ0.5A RGS=25â¦
(Note 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS=10V, ID=1.3A, VDD=50V
IG=100mA (Note 3)
Notes: 1. Pulse Test: Pulse widthâ¤300μs, Duty Cycleâ¤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
A
25 μA
250 μA
±100 nA
4.0 V
1.50 â¦
420
pF
66
pF
6.5
pF
48
ns
48
ns
42
ns
44
ns
13.8
nC
5.4
nC
6.0
nC
ï® SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD
TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
Continuous Source to Drain Current
Pulse Source to Drain Current
ISD
ISDM
(Note 2)
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty Cycle ⤠2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
MAX
1.6
5.5
18
UNIT
V
A
A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R209-030.D
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese