UF830K-MT Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UF830K-MT
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (T_J=25°C ~125°C)
V_DS
500
V
Drain to Gate Voltage (R_GS=20kΩ, T_J=25°C ~125°C)
V_DGR
500
V
Gate to Source Voltage
V_GS
±30
V
Drain Current
Continuous
Pulsed
I_D
I_DM
4.5
18
A
A
TO-220
73
W
TO-220F/TO-220F1
TO-220F3
38
W
Power Dissipation (T_C = 25°C) TO-220F2
P_D
40
W
TO-251/TO-251S
TO-251S2/ TO-251S4
46
W
TO-252/TO-252D
Single Pulse Avalanche Energy Rating (Note 2)
E_AS
Junction Temperature
T_J
300
mJ
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V_DD=50V, starting T_J =25°C, L=25mH, R_G=25Ω, peak I_AS=4.5A
 THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
100.3
1.71
3.31
3.125
2.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R209-030.D