UF7476 Datasheet, PDF (4/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF7476
Preliminary
POWER MOSFET
 ELECTRICAL CHARACTERISTICS (T_J = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
Source Current
I_S
MOSFET symbol showing the
integral reverse p-n junction
diode.
MIN TYP MAX UNIT
2.5 A
Maximum Body Diode Pulsed Current
(Note 1)
I_SM
120 A
Drain-Source Diode Forward Voltage
(Note)
V_SD
Body Diode Reverse Recovery Time
t_RR
Body Diode Reverse Recovery Charge
Q_RR
Body Diode Reverse Recovery Time
t_RR
Body Diode Reverse Recovery Charge
Q_RR
Notes: Pulse width ≤ 300µs, Duty cycle ≤ 2%
T_J=25°C, I_S=12A, V_GS=0V
T_J=125°C, I_S=12A, V_GS=0V
T_J=25°C, I_F=12A, V_R=12V,
di/dt=100A/µs (Note)
T_J=125°C, I_F=12A, V_R=12V,
di/dt=100A/µs (Note)
0.87 1.2 V
0.73
V
55 82 ns
59 89 nC
54 81 ns
60 90 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A70.b