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UF7476 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET
UF7476
Preliminary
POWER MOSFET
 ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
12
V
Gate-Source Voltage
VGSS
±12
V
Drain Current
Continuous
TA=25°C
TA=70°C
ID
15
A
12
A
Pulsed (Note 1)
IDM
120
A
Avalanche Current (Note 1)
Avalanche Energy (Note 3)
IAR
12
A
EAS
60
mJ
Power Dissipation (Note 4) TA=25°C
PD
Linear Derating Factor
2.5
W
0.02
W/°C
Junction Temperature
Storage Temperature Range
TJ
+150
°C
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Starting TJ = 25°C, L=0.8mH, IAS=12A, RG = 25Ω
4. When mounted on 1 inch square copper board
 THERMAL RESISTANCE
PARAMETER
Junction to Ambient (Note 4)
SYMBOL
θJA
RATINGS
75
 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS ID=250µA, VGS=0V
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
IDSS
VDS=9.6V, VGS=0V
VDS=9.6V, VGS=0V, TJ=125°C
IGSS
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
(Note)
Gate Threshold Voltage
RDS(ON)
VGS(TH)
VGS=4.5V, ID=15A
VGS=2.8V, ID=12A
VDS=VGS, ID=250µA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=6.0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
Output Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
QG
QGS
QGD
QOSS
tD(ON)
tR
tD(OFF)
tF
ID=12A, VDS=10V, VGS=4.5V
VDS=5.0V, VGS=0V
VDD=6.0V, ID=12A, RG=1.8Ω
VGS=4.5V (Note)
MIN TYP MAX UNIT
12
V
0.014
V/°C
100 µA
250 µA
200 nA
-200 nA
6.0 8.0 mΩ
12 30 mΩ
0.6
1.9 V
2550
pF
2190
pF
450
pF
26 40 nC
4.6
nC
11
nC
17
nC
11
ns
29
ns
19
ns
8.3
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A70.b