MMBTA56 Datasheet, PDF (4/5 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

MMBTA56
TYPICAL CHARACTERISTICS
Current -Gain Bandwidth Product
200
100
V_CE=-2.0V
TJ=25Â¥
70
50
30
20
-2.0-3.0 -5.0 -7.0-10 -20-30 -50-70-100 -200
Collector Current, I_C (mA)


1.0K
700
500
300
200
Switching Time
t_s
100
t_f
70
50
VCC=-40V
30 _IC/IB=10
20 IB1=IB2
t_r
10 ^{TJ=25Â¥ td@VBE(off)=-0.5V}
-5.0-7.0 -10 -20 -30-50-70-100-200-300-500
Collector Current, I_C (mA)




DC Current Gain
400
T_J=125Â¥
V_CE=-1.0V
200 _25Â¥
-55Â¥
100
80
60
40
-0.5 -1.0-2.0 -5.0-10 -20 -50 -100-200-500
Collector Current, I_C (mA)


PNP SILICON TRANSISTOR
Capacitance
100
70
T_J=25Â¥
50
Cibo
30
20
Cobo
10
7.0
5.0
-0.1-0.2 -0.5-10 -20 -5.0-10 -20 -50 -100
Reverse Voltage, V_R (V)


Active-Region Safe Operating Area
-1.0K
-700
1.0ms
-500
-300
-200
T_C=25Â¥
1.0s
-100 TA=25Â¥
-70
-50
MMBTA 55
-30
MMBTA56
-20
-10
Current Limit
Thermal Limit
Second Breakdown Limit
-1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100
Collector-Emitter Voltage, V_CE (V)


oONp Voltages
-1.0
T_J=125Â¥
-0.8 VBE(SAT )@IC/IB=10
-0.6
V_BE(ON)@V_CE=-1.0V
-0.4
-0.2
V_CE(SAT)@I_C/I_B=10
0
-0.5 -1.0-2.0 -5.0 -10 -20 -50 -100-200-500
Collector Current, I_C (mA)


UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-090,A