MMBTA56 Datasheet, PDF (2/5 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

MMBTA56
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T_A=25Ċ)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-80
V
Collector-Emitter Voltage
V_CEO
-80
V
Emitter-Base Voltage
V_EBO
-4
V
Collector Current - Continuous
I_C
-500
mA
Total Device Dissipation(Note 1)
Derate Above 25Ċ
350
mW
P_D
2.8
mW/Ċ
Junction Temperature
Storage Temperature
T_J
+150
Ċ
T_STG
-55 ~ +150
Ċ
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
θ_JA
MAX
357
ELECTRICAL CHARACTERISTICS (Ta=25Ċ, unless otherwise specified)
UNIT
Ċ/W
PARAMETER
SYMBOL TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
BV_CEO I_C=-1.0mA, I_B=0
Emitter-Base Breakdown Voltage
BV_EBO I_E=-100µA, Ic=0
Collector Cutoff Current
I_CES V_CE=-60V, I_B=0
Collector Cutoff Current
I_CBO V_CB=-80V, I_E=0
ON CHARACTERISTICS
DC Current Gain
h_FE
I_C=-10mA, V_CE=-1V
I_C=-100mA, V_CE=-1V
Collector-Emitter Saturation Voltage
V_CE(SAT) I_C=-100mA, I_B=-10mA
Base-Emitter on Voltage
V_BE(ON) I_C=-100mA, V_CE=-1V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(Note2)
f_T
I_C=-10mA, V_CE=-2V,
f=100MHz
Note 1: Pulse test: PW≤300µs, Duty Cycle≤2%
2: f_T is defined as the frequency at which IhfeI extrapolates to unity.

MIN TYP MAX UNIT
-80
V
-4
V
-0.1 µA
-0.1 µA
100
100
-0.25 V
-1.2
V
100
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-090,A