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| 3N60K-MT Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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3N60K-MT
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ
ID = 250 μA,
Referenced to
25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD = 30V, ID = 0.5 A, RG = 25â¦
(Note 1, 2)
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tF
QG
QGS
VDS= 50V, ID= 1.3A, VGS= 10 V
(Note 1, 2)
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty cycleâ¤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
600
V
10 μA
100 nA
-100 nA
0.6
V/°C
2.0
4.0 V
3.2 â¦
320 610 pF
40 60 pF
6 16 pF
47
ns
50
ns
60
ns
30
ns
13.5
nC
5.3
nC
2.7
nC
1.4 V
3.0 A
12 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-044.b
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