3N60K-MT Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE MOSFET

3N60K-MT
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
600
V
Gate-Source Voltage
Avalanche Current (Note 2)
V_GSS
±30
V
I_AR
3.0
A
Continuous Drain Current
Pulsed Drain Current (Note 2)
I_D
3.0
A
I_DM
12
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
150
mJ
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
Power Dissipation
TO-220F/TO-220F1
TO-220F3
TO-220F2
P_D
34
W
35
W
TO-251/TO-251S
TO-252/TO-252D
50
W
TO-220
1.67
W/°C
Derate above 25°C
TO-220F/TO-220F1
TO-220F3
TO-220F2
P_D
0.272
0.28
W/°C
W/°C
TO-251/TO-251S
TO-252/TO-252D
0.4
W/°C
Junction Temperature
T_J
+150
°C
Operating Temperature
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J.
3. L=33mH, I_AS=3A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤3.0A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
1.67
3.68
3.58
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-044.b