 English |
|
|
|
|
|
|
|
| 3N50K-MK Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
| |||
| ◁ |
3N50K-MK
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=1.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=0.5A, RG=25â¦
(Note 1, 2)
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=3A, VGS=0V
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
V
1 µA
+100 nA
-100 nA
3.0
5.0 V
3.2 â¦
415 530 pF
250 350 pF
50 60 pF
42 60 ns
18 25 ns
103 130 ns
18 25 ns
10 13 nC
1.5
nC
5.5
nC
3A
12 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-036.B
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese