3N50K-MK Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

3N50K-MK
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
500
V
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 2)
I_DM
3 (Note 5)
12 (Note 5)
A
A
Avalanche Current (Note 2)
I_AR
Avalanche Energy
Single Pulsed (Note 3)
E_AS
3
A
150
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
TO-220F/TO-220F1
TO-220F3
25
W
Power Dissipation
TO-220F2
P_D
26
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
TO-220
0.5
W/°C
TO-220F/TO-220F1
TO-220F3
0.2
W/°C
Derate above 25°C
TO-220F2
P_D
0.208
W/°C
TO-251/TO-251S
TO-251S2/TO-251S4
0.4
W/°C
TO-252/TO-252D
Power Dissipation
Derate above 25°C
P_D
36
0.288
W
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 33.3 mH, I_AS = 3A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 3A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
5. Drain current limited by maximum junction temperature.
 THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
θ_JA
θ_JC
RATING
62.5
110
1.67
4.9
4.8
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R205-036.B