2N4401 Datasheet, PDF (4/6 Pages) NXP Semiconductors – NPN switching transistor

2N4401
TYPICAL CHARACTERISTICS


Typical Pulsed Current Gain
vs Collector Current
500
VCE =5V
400
125Â¥
300
200
25Â¥
100
-40Â¥
0
0.1 0.3 1 3 10 30 100 300
Collector Current, I_C (mA)




Base-Emitter Saturation Voltage
vs Collector Current
Ȧ=10
1
-40Â¥
0.8
25Â¥
0.6
125Â¥
0.4
1
10
100 500
Collector Current, I_C (mA)




Collector-Cutoff Current
500
vs Ambient Temperature
100
V_CB=40V
10
1
0.1
25 50 75 100 125 150
Ambient Temperature, T_A(Â¥)


NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltage
vs Collector Current
0.4
Ȧ=10
0.3
125Â¥
0.2
25Â¥
0.1
-40Â¥
1
10
100 500
Collector Current, IC (mA)


Base-Emitter On Voltage
vs Collector Current
1
VCE =5V
-40Â¥
0.8
25Â¥
0.6
125Â¥
0.4
0.2
0.1
1
10 25
Collector Current, I_C (mA)


Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
f=1MHz
16
Cte
12
8
C_ob
4
0.1
1
10
100
Reverse Bias Voltage (V)


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