2N4401 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN switching transistor

2N4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25Â¥, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25Â¥
V_CBO
V_CEO
V_EBO
I_C
P_D
60
V
40
V
6
V
600
mA
625
mW
5.0
mW/Â¥
Junction Temperature
T_J
+150
Ċ
Storage Temperature
T_STG
-40 ~ +150
Ċ
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25Â¥, unless otherwise specified)
CHARACTERISTIC
SYMBOL
RATING
Thermal Resistance, Junction to Ambient
θ_JA
200
Thermal Resistance, Junction to Case
θ_JC
83.3
ELECTRICAL CHARACTERISTICS (Ta=25Â¥, unless otherwise specified)
UNIT
Â¥/W
Â¥/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV_CBO I_C=0.1mA, I_E=0
60
V
Collector-Emitter Breakdown Voltage (note) BV_CEO I_C=1mA, I_B=0
40
V
Emitter-Base Breakdown Voltage
BV_EBO I_E=0.1mA, I_C=0
6
V
Collector Cut-off Current
I_CEX V_CE=35V, V_EB=0.4V
µA
Base Cut-off Current
I_BL V_CE=35V, V_EB=0.4V
µA
ON CHARACTERISTICS (note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS1
h_FE1 V_CE=1V, I_C=0.1mA
h_FE2 V_CE=1V, I_C=1mA
h_FE3 V_CE=1V, I_C=10mA
h_FE4 V_CE=1V, I_C=150mA
h_FE5 V_CE=2V, I_C=500mA
V_CE(SAT1) I_C=150mA, I_B=15mA
V_CE(SAT2) I_C=500mA, I_B=50mA
V_BE(SAT1) I_C=150mA, I_B=15mA
V_BE(SAT2) I_C=500mA, I_B=50mA
20
40
80
100
300
40
0.4 V
0.75 V
0.75
0.95 V
1.2 V
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
f_T V_CE=10V, I_C=20mA, f=100MHz 250
C_cb V_CB=5V, I_E=0, f=140kHz
C_eb V_BE=0.5V, I_C=0, f=140kHz
hie V_CE=10V, I_C=1mA, f=1kHz
1
hre V_CE=10V, I_C=1mA, f=1kHz
0.1
hfe V_CE=10V, I_C=1mA, f=1kHz
40
hoe V_CE=10V, I_C=1mA, f=1kHz
1
MHz
6.5 pF
30 pF
15 kΩ
8 ×10^-4
500
30 µmhos
Delay Time
t_D
Rise Time
t_R
Storage Time
t_S
Fall Time
t_F
Note: Pulse test: PulseWidth≤300µs, Duty Cycle≤2%

V_CC=30V, V_EB=2V
I_C=150mA I_B1=15mA
V_CC=30V, V_EB=2V
I_C=150mA I_B1=15mA
V_CC=30V, I_C=150mA
I_B1= I_B2=15mA
15 ns
20 ns
225 ns
30 ns
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