UP2790 Datasheet, PDF (3/5 Pages) Unisonic Technologies – SWITCHING N-AND P-CHANNEL POWER MOSFET

UP2790
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
N-Channel
PARAMETER
Drain to Source Voltage (V_GS=0V)
Gate to Source Voltage (V_DS=0V)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Avalanche Current (Note 3)
Single Avalanche Energy (Note 3)
Power Dissipation (Note 4)
Junction Temperature
Storage Temperature
SYMBOL
V_DSS
V_GSS
I_D
I_DM
I_AS
E_AS
P_D
T_J
T_STG
RATINGS
30
±20
±6
±24
6
3.6
1.7
+150
-55 ~ +150
UNIT
V
V
A
A
A
mJ
W
°C
°C
P-Channel
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (V_GS=0V)
V_DSS
-30
V
Gate to Source Voltage (V_DS=0V)
V_GSS
±20
V
Drain Current (DC)
I_D
±6
A
Pulsed Drain Current (Note 2)
I_DM
±24
A
Single Avalanche Current (Note 3)
I_AS
-6
A
Single Avalanche Energy (Note 3)
E_AS
3.6
mJ
Power Dissipation (Note 4)
P_D
1.7
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10 μs, Duty Cycle≤1%
3. Mounted on ceramic substrate of 2000 mm² x 1.6 mm
1
4. L = 0.1mH, VDD = ₂ x VDSS, RG = 25 Ω, Starting TJ = 25°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-339.a