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| UGV3040L-TA3-T Datasheet, PDF (3/4 Pages) Unisonic Technologies – Low Phase Noise | |||
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UGV3040
Insulated Gate Bipolar Transistor
ï® ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Off State Characteristics
Collector to Emitter Breakdown Voltage
BVCER
IC=2mA, VGE=0V, RG=1Kâ¦,
TJ=-40~150°C
Collector to Emitter to Breakdown Voltage
Emitter to Collector Breakdown Voltage
BVCES
BVECS
IC=10mA, VGE=0V, RG=0,
TJ=-40~150°C
IC=-75mA, VGE=0V, TC=25°C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
BVGES
ICER
IECS
R1
IGES=±2mA
VCER=250V,
RG=1Kâ¦
VEC=24V
TC=25°C
TC=150°C
TC=25°C
TC=150°C
Gate to Emitter Resistance
R2
On State Characteristics
Collector to Emitter Saturation Voltage
IC=6A, VGE=4V TC=25°C
VCE(SAT) IC=10A, VGE=4.5V TC=150°C
IC=15A, VGE=4.5V TC=150°C
Dynamic Characteristics
Gate Charge
Gate to Emitter Threshold Voltage
QG(ON)
VGE(TH)
IC=10A, VCE=12V, VGE=5V
IC=1.0mA, VCE=VGE
Gate to Emitter Plateau Voltage
VGEP IC=10A, VCE=12V
Switching Characteristics
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time Inductive
td(ON)R
trR
td(OFF)L
tfL
VCE=14V, RL=1â¦, VGE=5V,
RG=1Kâ¦, TJ=25°C
Self Clamped Inductive Switching
SCIS
TJ= 25°C, L=3.0mHy, RG=1Kâ¦,
VGE=5V
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
350 400 450 V
400 450 500 V
30
V
±12 ±14
V
25 µA
1 mA
1 mA
40 mA
70
â¦
10K
26K â¦
1.25 1.60 V
1.40 1.80 V
1.90 2.20 V
17
nC
1.3
2.2 V
3.0
V
0.48 4 μs
2.1 7 μs
1.4 15 μs
2.2 15 μs
300 mJ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R219-011.G
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